Skip to main content Accessibility help

The characterization and properties of InN grown by MOCVD

  • S.-G. Dong (a1) (a2), G.-H. Fan (a1) and Y.-C. Shuai (a1)


The characterization and properties of InN thin films grown on GaN templates by metalorganic chemical vapor deposition (MOCVD) at various growth temperatures were investigated. Their carrier concentrations ranged from 4.6 × 1018 to 4 × 1019 cm−3and mobility valued from 150 to 1300 cm2/V s. The variation of the growth temperature brought about different growth rates. It was also found that growth rate is increased with the increasing growth temperature and reached 470 nm/h for the InN epitaxial layer grown at 675 °C. The surface roughness of InN layers was obtained from AFM measurement. The structural quality of the InN layers was determined by TEM. The surface and cross-sectional morphologies of these films are evaluated by SEM. The layer crystalline quality was investigated by means of X-ray diffraction in the rocking curves. Photoluminescence measurements performed at 7 K and room temperature gave emission peaks at around 0.7 eV.


Corresponding author


Hide All
[1] Bhuiyan, A.G., Hashimoto, A., Yamamoto, A., J. Appl. Phys. 94, 2779 (2003)
[2] Jain, S.C., Willander, M., Narayan, J., Overstraeten, R.V., J. Appl. Phys. 87, 965 (2000)
[3] Xie, Z.L., Zhang, R., Liu, B., Li, L., Liu, C.X., Xiu, X.Q., Zhao, H., Han, P., Gu, S.L., Shi, Y., Zheng, Y.D., J. Cryst. Growth 298, 409 (2007)
[4] Bi, Z., J. Cryst. Growth 300, 123 (2007)
[5] Wang, L.L., Wang, H., Chen, J., Sun, X., Zhu, J.J., Jiang, D.S., Yang, H., Liang, J.W., Superlatt. Microstruct. 43, 81 (2008)
[6] Intartaglia, R., Maleyre, B., Ruffenach, S., Briot, O., Taliercio, T., Gil, B., Appl. Phys. Lett. 86, 142104 (2005)
[7] Bi, Z.X., Zhang, R., Xie, Z.L., Xiu, X.Q., Ye, Y.D., Liu, B., Gu, S.L., Shen, B., Shi, Y., Zheng, Y.D., Mater. Lett. 58, 3641 (2004)
[8] Singh, P., Ruterana, P., Morales, M., Goubilleau, F., Wojdak, M., Carlin, J.F., Ilegems, M., Chateigner, D., Superlatt. Microstruct. 36, 537 (2004)
[9] Huang, Y., Wang, H., Sun, Q., Chen, J., Li, D.Y., Wang, Y.T., Yang, H., J. Cryst. Growth 276, 3 (2005)
[10] Ruterana, P., Abouzaid, M., Gloux, F., Maciej, W., Doualan, J.L., Drago, M., Schmidtling, T., Pohl, U.W., Richter, W., Phys. Stat. Sol. (a) 203, 158 (2006)
[11] Lin, J.C., Su, Y.K., Chang, S.J., Lan, W.H., Chen, W.R., Cheng, Y.C., Lin, W.J., Tzeng, Y.C., Shin, H.Y., Chang, C.M., Opt. Mater. 30, 517 (2007)
[12] Zhu, X.L., Guo, L.W., Yu, N.S., Yan, J.F., Peng, M.Z., Zhang, J., Jia, H.Q., Chen, H., Zhou, J.M., J. Cryst. Growth 306, 292 (2007)
[13] Wang, H., Huang, Y., Sun, Q., Chen, J., Zhu, J.J., Wang, L.L., Wang, Y.T., Yang, H., Wu, M.F., Qu, Y.H., Jiang, D.S., Mater. Lett. 61, 516 (2007)
[14] Y. Nanishi, Y. Saito, T. Yamaguchi, F. Matsuda, T. Araki, H. Naoi, A. Suzuki, H. Harima, T. Miyajima, Mater. Res. Soc. Symp. Proc. 798, Y12.1.1-Y12.1.12 (2004)
[15] V. Davydov, A. Khlochikin, S. Ivanov, J. Aderhold, A. Yamamoto, Nitride semiconductors, in Hand Book on Materials and Devices, edited by P. Ruterana, M. Albrecht, J. Neugebauer (Wiley-VCH, Weinheim, Germany, 2003), p. 274


Related content

Powered by UNSILO

The characterization and properties of InN grown by MOCVD

  • S.-G. Dong (a1) (a2), G.-H. Fan (a1) and Y.-C. Shuai (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.