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Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices

  • Usman Younis (a1), Barry M. Holmes (a2) and David C. Hutchings (a2)

Abstract

Processes to achieve high spatial resolution ion implantation induced quantum well intermixing in GaAs/AlGaAs superlattices have been developed. Ion implantation has been carried out using various doses of 4 MeV As2+ ion beam, followed by rapid thermal annealing at various temperatures for 60 s. Low temperature photoluminescence measurements reveal a blue-shift up to 90 nm in the energy band-gap. Propagation losses have been characterized in the intermixed waveguides, and losses as low as 0.55 cm−1 have been observed for 0.5 × 1013 cm−2 implantation dose which gives a blue-shift of 68 nm when annealed at 775 °C. The spatial resolution of ~1.2 μm has been observed at the depth of 2 μm inside the epitaxial structure.

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Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices

  • Usman Younis (a1), Barry M. Holmes (a2) and David C. Hutchings (a2)

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