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Ce3+ luminescent centres in atomic layer epitaxySrS thin film electroluminescent devices

Published online by Cambridge University Press:  15 January 2000

P. Benalloul ,
C. Barthou ,
J. Benoit ,
A. Garcia ,
C. Fouassier  and
E. Soininen
P. Benalloul*
Affiliation:
Laboratoire d'Optique des Solides (UMR 7601 du CNRS), Université Pierre et Marie Curie, Case n° 80, 4 place Jussieu, 75252 Paris, France
C. Barthou
Affiliation:
Laboratoire d'Optique des Solides (UMR 7601 du CNRS), Université Pierre et Marie Curie, Case n° 80, 4 place Jussieu, 75252 Paris, France
J. Benoit
Affiliation:
Laboratoire d'Optique des Solides (UMR 7601 du CNRS), Université Pierre et Marie Curie, Case n° 80, 4 place Jussieu, 75252 Paris, France
A. Garcia
Affiliation:
Institut de Chimie de la Matière Condensée de Bordeaux, CNRS, 33608 Pessac Cedex, France
C. Fouassier
Affiliation:
Institut de Chimie de la Matière Condensée de Bordeaux, CNRS, 33608 Pessac Cedex, France
E. Soininen
Affiliation:
Planar Systems Inc., Olarinluoma 9, P.O. Box 46, FIN, 02201 Espoo, Finland
*
pben@ccr.jussieu.fr
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Abstract

A luminescent study under selective photonic excitation has established the presence of three different kinds of Ce3+ centres in SrS atomic layer epitaxy thin films: one in a regular sulfur octahedral sites and two others in lower symmetry. These last sites shift the emission spectra towards the green. High thermal annealing up to 750 °C improves the crystallinity of the SrS:Ce layer by converting low symmetry Ce3+ sites in regular octahedral sites and decreasing the density of defects. These two effects lead to efficient PL layers with a good blue chromaticity.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 9 , Issue 1 , January 2000 , pp. 19 - 24
Copyright
© EDP Sciences, 2000

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References

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