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Analytical calculation of site and surface reaction probabilities of SiHx radicals in PECVD process
Published online by Cambridge University Press: 20 March 2013
Abstract
In this work we present a theoretical and mathematical relationship which calculates the site reaction probability (SRP) of the sticking on (Si-) dangling bonds (DB) or the SRP to abstract H from (Si-H) bonds, on the a-Si:H surface. The results are in agreement with those obtained by the Monte Carlo simulation. Using these probabilities allowed us to compute the surface reaction probability of SiHx radicals on a-Si:H for several values of the temperature. The surface reaction probability (SFRP) results show also an excellent agreement with other works found in the literature.
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- © EDP Sciences, 2013
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