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XPS and cathodoluminescence studies of HfO2, Sc2O3 and (HfO2)1-x(Sc2O3)x films

Published online by Cambridge University Press:  25 October 2013

Vasily V. Kaichev
Affiliation:
Boreskov Institute of Catalysis, Lavrentiev ave. 5, 630090 Novosibirsk, Russian Federation
Ekaterina V. Ivanova
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya st. 26, 194021 Saint Petersburg, Russian Federation
Maria V. Zamoryanskaya
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya st. 26, 194021 Saint Petersburg, Russian Federation
Tamara P. Smirnova
Affiliation:
Nikolaev Institute of Inorganic Chemistry, Lavrentiev ave. 3, 630090 Novosibirsk, Russian Federation
Lubov V. Yakovkina
Affiliation:
Nikolaev Institute of Inorganic Chemistry, Lavrentiev ave. 3, 630090 Novosibirsk, Russian Federation
Vladimir A. Gritsenko
Affiliation:
Rzhanov Institute of Semiconductor Physics, Lavrentiev ave. 13, 630090 Novosibirsk, Russian Federation
Corresponding
E-mail address:
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Abstract

X-ray photoelectron spectroscopy (XPS) and cathodoluminescence (CL) method have been employed to study the chemical composition and the oxygen vacancy concentration of HfO2, Sc2 O3 and (HfO2)1−x(Sc2O3)x films. It was found that the increase of Sc content led to monotonic decreasing the Hf4f7/2 and Sc2p3/2 binding energies indicating to form solid solution (HfO2)1−x(Sc2O3)x. All the samples characterized by the intensive CL spectra with maximum around 3 eV which originated due to some radiative recombination emission caused by oxygen deficiency. The concentration of oxygen vacancy in the Sc-doped HfO2 is sensitive to the Sc content and as a result the intensity of CL spectra of (HfO2)1−x(Sc2O3)x is lower that those of pure HfO2 and Sc2O3.

Type
Research Article
Copyright
© EDP Sciences, 2013

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References

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XPS and cathodoluminescence studies of HfO2, Sc2O3 and (HfO2)1-x(Sc2O3)x films
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