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TEM observation of nanopipes in heteroepitaxial GaN

Published online by Cambridge University Press:  15 July 2004

E. Jezierska ,
J. L. Weyher ,
M. Rudzinski  and
J. Borysiuk
E. Jezierska*
Affiliation:
Warsaw University of Technology, Faculty of Materials Science & Engineering, Woloska 141, 02-507 Warsaw, Poland
J. L. Weyher
Affiliation:
University of Nijmegen, RIM, Exp. Solid State Physics III, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
M. Rudzinski
Affiliation:
Warsaw University of Technology, Faculty of Materials Science & Engineering, Woloska 141, 02-507 Warsaw, Poland University of Nijmegen, RIM, Exp. Solid State Physics III, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
J. Borysiuk
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
*
ejez@inmat.pw.edu.pl
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Abstract

Heteroepitaxial GaN layers grown on sapphire by metal organic vapour phase epitaxy (MOVPE) have been characterised by conventional transmission electron microscopy (TEM) on planar and cross-sectional samples, Large Angle Convergent Beam Electron Diffraction (LACBED) and by high-resolution transmission electron microscopy (HRTEM). Hollow tubes termed nanopipes were resolved on planar view and cross-sections of heteroepitaxial GaN. For advanced studies of the nature of nanopipes the LACBED method was employed. The recognition between perfect structure and screw distortion around nanopipes was performed with high accuracy using Zone Axis LACBED images.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 255 - 258
Copyright
© EDP Sciences, 2004

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