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Microstructure and morphology evolution in chemical solution deposited semiconductor films: 2. PbSe on As face of GaAs(111)

Published online by Cambridge University Press:  25 June 2004

M. Shandalov
Affiliation:
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Y. Golan
Affiliation:
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
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Abstract

Nanocrystalline PbSe films were grown on GaAs(100) and on the As face of GaAs(111) substrates using chemical solution deposition. The microstructure of the films was found to be strongly affected by the deposition temperature over a surprisingly narrow temperature range. In PbSe deposited on GaAs(100), gradual increase in crystallite size and transition to $\langle$ 111 $\rangle$ texture were obtained with increasing temperature. In contrast with PbSe deposited on GaAs(100), the $\langle$ 111 $\rangle$ texture in PbSe on GaAs(111) dominated throughout the deposition temperature range. Since temperature directly affects reaction rate, the temperature-dependent morphological changes observed in this work occur primarily due to increasing sample thickness.

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Research Article
Copyright
© EDP Sciences, 2004

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References

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Microstructure and morphology evolution in chemical solution deposited semiconductor films: 2. PbSe on As face of GaAs(111)
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