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Lateral conductivity in GaAs/InAs quantum dot structures

Published online by Cambridge University Press:  15 July 2004

L. Dózsa ,
A. L. Tóth ,
Zs. J Horváth ,
P. Hubík ,
J. Krištofik ,
J. J. Mareš ,
E. Gombia ,
R. Mosca ,
S. Franchi  and
P. Frigeri
L. Dózsa*
Affiliation:
Research Institute for Technical Physics and Materials Science, Konkoly-Thege 29-33, H-1121 Budapest, Hungary
A. L. Tóth
Affiliation:
Research Institute for Technical Physics and Materials Science, Konkoly-Thege 29-33, H-1121 Budapest, Hungary
Zs. J Horváth
Affiliation:
Research Institute for Technical Physics and Materials Science, Konkoly-Thege 29-33, H-1121 Budapest, Hungary
P. Hubík
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6, Czech Republic
J. Krištofik
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6, Czech Republic
J. J. Mareš
Affiliation:
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6, Czech Republic
E. Gombia
Affiliation:
MASPEC Institute - C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini-Parma, Italy
R. Mosca
Affiliation:
MASPEC Institute - C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini-Parma, Italy
S. Franchi
Affiliation:
MASPEC Institute - C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini-Parma, Italy
P. Frigeri
Affiliation:
MASPEC Institute - C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini-Parma, Italy
*
dozsa@mfa.kfki.hu
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Abstract

Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 93 - 95
Copyright
© EDP Sciences, 2004

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References

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