Skip to main content Accessibility help
×
Home
Hostname: page-component-77ffc5d9c7-n2wdk Total loading time: 0.193 Render date: 2021-04-23T05:36:45.100Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

High performance AlGaN/GaN power switch with Si3N4 insulation

Published online by Cambridge University Press:  14 January 2013

Defeng Lin
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Xiaoliang Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
Hongling Xiao
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
He Kang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Cuimei Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Lijuan Jiang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Chun Feng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Hong Chen
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Qingwen Deng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Yang Bi
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Jingwen Zhang
Affiliation:
ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
Xun Hou
Affiliation:
ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
Corresponding
E-mail address:
Get access

Abstract

We report the fabrication of AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using Si3N4 insulator. The Si3N4 films were deposited by plasma enhanced chemical vapor deposition (PECVD) as the surface passivation, interlayer films and the gate dielectric. In comparison with Schottky-gate HEMTs, the gate leakage currents of MIS-HEMTs exhibited three orders of magnitude reduction. With similar device structures, the off-state breakdown voltage of MIS-HEMTs was 1050 V with a specific on-resistance of 4.0 mΩ cm2, whereas the breakdown voltage and specific on-resistance of SG-HEMTs were 740 V and 4.4 mΩ cm2, respectively. In addition, the MIS-HEMTs exhibited little current slump in the pulsed measurements and possessed faster switch speed than Si MOSFET. We demonstrate that AlGaN/GaN MIS-HEMTs are promising not only for microwave applications but also for high power switching applications.

Type
Research Article
Copyright
© EDP Sciences, 2013

Access options

Get access to the full version of this content by using one of the access options below.

References

Baliga, B.J., IEEE Trans. Electron Devices ED-43, 1717 (1996)CrossRef
Nomura, T., Kambayashi, H., Masuda, M., Ishii, S., Ikeda, N., Lee, J., Yoshida, S., IEEE Trans. Electron Devices 53, 2908 (2006)CrossRef
Yoshida, S., Li, J., Wada, T., Takehara, H., IEEE Proc. Circuits Devices Syst. 151, 207 (2004)CrossRef
Shi, J., Eastman, L.F., Xin, X., Pophristic, M., Appl. Phys. Lett. 95, 042103-3 (2009)
Zhang, N.-Q., Keller, S., Parish, G., Heilman, S., Denbaars, S.P., Mishra, U.K., IEEE Electron Device Lett. 21, 421 (2000)CrossRef
Yoshida, S., Ishii, H., Li, J., Wang, D., Ichikawa, M., Solid State Electron. 47, 589 (2003)CrossRef
Sotio, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I., Ogura, T., IEEE Trans. Electron Devices 50, 2528 (2003)
Yagi, S., Shimizu, M., Inada, M., Yamamoto, Y., Piao, G., Okumura, H., Yano, Y., Akutsu, N., Ohashi, H., Solid State Electron. 50, 1057 (2006)CrossRef
Ochiai, M., Akita, M., Ohno, Y., Kishimoto, S., Maezawa, K., Mizutani, T., Jpn J. Appl. Phys. Lett. Part 1 42, 2278 (2003)CrossRef
Kuraguchi, M., Takada, Y., Saito, W., Omura, I., Tsuda, K., Phys. Stat. Sol. C 2, 2647 (2005)CrossRef
Zhang, N.-Q., Moran, B., DenBaars, S.P., Mishra, U.K., Wang, X.W., Ma, T.P., Phys. Stat. Sol. A 188, 213 (2001)3.0.CO;2-8>CrossRef
Shi, J., Choi, Y.C., Pophristic, M., Spencer, M.G., Eastman, L.F., Phys. Stat. Sol. C 5, 2013 (2008)CrossRef
Khan, M.A., Simin, G., Yang, J., Zhang, J., Koudymov, A., Shur, M.S., Gaska, R., Hu, X., Tarakji, A., IEEE Trans. Microwave Theor. Tech. 51, 624 (2003)CrossRef
Simin, G., Hu, X., Tarakji, A., Zhang, J., Koudymov, A., Saygi, S., Yang, J., Khan, M.A., Shur, M.S., Gaska, R., Jpn J. Appl. Phys. Part 2 40, L1142 (2001)CrossRef
Hu, X., Koudymov, A., Simin, G., Yang, J., Khan, M.A., Tarakji, A., Shur, M.S., Gaska, R., Appl. Phys. Lett. 79, 2832 (2001)CrossRef
Ikeda, N., Kato, K., Kondoh, K., Kambayashi, H., Li, J., Yoshida, S., Phys. Stat. Sol. A 204, 2028 (2007)CrossRef

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 9 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 23rd April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

High performance AlGaN/GaN power switch with Si3N4 insulation
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

High performance AlGaN/GaN power switch with Si3N4 insulation
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

High performance AlGaN/GaN power switch with Si3N4 insulation
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *