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Characteristics of deposited Eu2O3 film as a thick gate dielectric for silicon

Published online by Cambridge University Press:  25 August 2004

A. A. Dakhel
Affiliation:
Dept. of Physics, College of Science, University of Bahrain, PO Box 32038, Bahrain
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Abstract

Thin Eu2O3 films were prepared on Si (P) substrates to form MOS devices. The oxide films were characterised by X-ray fluorescence (EDXRF) and X-ray diffraction (XRD). The ac conduction mechanism and the dielectric properties of the oxide layers were studied at room temperature and in the temperature range of 290–420 K. We have also investigated the effect of the oxide-crystal structure on the surface density of states (N ss ) at the insulator/semiconductor (I/S) interface. The method of capacitance-voltage (CV) measurements was used to determine the N ss . It was concluded that the density of surface states in the mid-gap increases by about 30 times when the oxide Eu2O3 crystallises in polycrystalline form. Also, the density of the trapped charges in the oxide layer decreases by about 12 times when the oxide crystallises. The infrared studies inform us about the humidity incorporation in the oxide film in form of chemisorbed hydroxyl (OH) groups that leave the film for T > 373 K.

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Research Article
Copyright
© EDP Sciences, 2004

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Characteristics of deposited Eu2O3 film as a thick gate dielectric for silicon
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