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Anomalous electrical properties of dislocation slip plane in Si

Published online by Cambridge University Press:  15 July 2004

V. G. Eremenko
Affiliation:
Institute of Microelectronics Technology, Russia Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia
E. B. Yakimov
Affiliation:
Institute of Microelectronics Technology, Russia Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia
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Abstract

The anomalous bright contrast in the specimens containing dense dislocation slip planes, swept by moving dislocations was analysed. It is shown that the bright EBIC contrast outside the Schottky barrier is related to electrical activity of the extended defects generated in the slip plane by moving dislocations and thus, the slip plane acts as extended barrier separating excess carriers.

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Type
Research Article
Copyright
© EDP Sciences, 2004

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References

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Eremenko, V., Jimenez, J., Fedorov, A., Garcia, C., Sanz, L. F., Avella, M., Inst. Phys. Conf. Ser. 160, 269 (1997)
Bondarenko, I. E., Blumtritt, H., Heydenreich, J., Kazmiruk, V. V., Yakimov, E. B., Phys. Stat. Sol. A 95, 173 (1986) CrossRef
Alexander, H., Dietrich, S., Hühne, M., Kolbe, M., Weber, G., Phys. Stat. Sol. A 117, 417 (1990) CrossRef
Eremenko, V., Abrosimov, N., Fedorov, A., Phys. Stat. Sol. A 171, 383 (1999) 3.0.CO;2-M>CrossRef
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Kisielowski-Kemmerich, C., Weber, G., Alexander, H., J. Electron. Mater. 14a, 387 (1985)

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