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Evaluation of experimental stress–strain dependence in thermally cycled Al thin film on Si(100)

  • J. Keckes (a1), M. Hafok (a1), E. Eiper (a1), A. Hofer (a1), R. Resel (a2) and C. Eisenmenger-Sittner (a3)...

Abstract

A new method is introduced for the evaluation of experimental stress–strain dependence in thermally cycled thin films. The method is demonstrated on the analysis of an Al thin film on a Si(100) substrate characterized using in situ high-temperature X-ray diffraction 25–450 °C. Diffraction data are used to evaluate in-plane elastic strain in the film as a function of thermal strain originating from the mismatch of thermal expansion coefficients (TECs) between the film and the substrate. The magnitude of the thermal strain is calculated from experimental TECs of the film and the substrate at every measurement temperature. By relating in-plane stresses to thermal strains, an experimental stress–strain dependence for the Al thin film is obtained. The proposed method allows one to identify elastic behavior and to quantify plastic strain in the film. Finally, advantages of the method are discussed in particular its independence from using TECs reported in the literature.

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a)Author to whom all correspondence should be addressed; electronic mail: keckes@unileoben.ac.at

References

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Badawi, F. and Villain, P. (2003). J. Appl. Crystallogr. JACGAR 36, 869.
Dehm, G., Inkson, B. J., and Wagner, T. (2002). Acta Mater. ACMAFD 50, 5021.
Eiper, E., Resel, R., Eisenmenger-Sittner, C., Hafok, M., and Keckes, J. (2004). Powder Diffr. PODIE2 10.1154/1.1649326 19, 74.
Keckes, J., Gerlach, J. W., Averbeck, R., Riechert, H., Bader, S., Hahn, S., Lugauer, H. J., Lell, A., Härle, V., Wenzel, A., and Rauschenbach, B. (2001a). Appl. Phys. Lett. APPLAB 10.1063/1.1427424 79, 4307.
Keckes, J., Gerlach, J. W., Averbeck, R., Riechert, H., Bader, S., Hahn, B., Lugauer, H. J., Lell, A., Härle, V., Wenzel, A., and Rauschenbach, B. (2001b). Appl. Phys. Lett. APPLAB 10.1063/1.1427424 79, 4307.
Keckes, J., Six, S., Gerlach, J. W., and Rauschenbach, B. (2004). J. Cryst. Growth JCRGAE 262, 119.
Keckes, J., Wenzel, A., Gerlach, J. W., and Rauschenbach, B. (2003). Nucl. Instrum. Methods Phys. Res. B NIMBEU 211, 519.
Kraft, O. and Nix, W. D. (1998). J. Appl. Phys. JAPIAU 10.1063/1.367118 83, 3035.
Kraft, O., Hommel, M., and Arzt, E. (2000). Mater. Sci. Eng., A MSAPE3 10.1016/S0921-5093(00)00876-5 288A, 209.
Larson, B. C., Yang, W., Ice, G. E., Budai, J. D., and Tischler, J. Z. (2002). Nature (London) NATUAS 10.1038/415887a 415, 887.
Lau, J. H. (1993). Thermal Stress and Strain in Microelectronic Packaging, ITP, New York.
Legros, M., Hemker, K. J., Gouldstone, A., Suresh, S., Keller-Flaig, R. M., and Arzt, E. (2002). Acta Mater. ACMAFD 10.1016/S1359-6454(02)00157-X 50, 3435, and references therein.
Nix, W. D. (1989). Metall. Trans. A MTTABN 20A, 2217.
Noyan, I. C. (1992). Adv. X-Ray Anal. AXRAAA 35, 461.
Noyan, I. C. and Cohen, J. B. (1987). Residual Stress: Measurement by Diffraction and Interpretation, Springer, Berlin.
Noyan, I. C. and Goldsmith, C. C. (1991). Adv. X-Ray Anal. AXRAAA 34, 587.
Ortner, B. (1986). Adv. X-Ray Anal. AXRAAA 29, 113.
Resel, R., Tamas, E., Sonderegger, B., Hofbauerand, P., and Keckes, J. (2003). J. Appl. Crystallogr. JACGAR 10.1107/S0021889802019568 36, 80.
Van Houtte, P. and De Buyser, L. (1993). Acta Mater. ACMAFD 41, 323.

Keywords

Evaluation of experimental stress–strain dependence in thermally cycled Al thin film on Si(100)

  • J. Keckes (a1), M. Hafok (a1), E. Eiper (a1), A. Hofer (a1), R. Resel (a2) and C. Eisenmenger-Sittner (a3)...

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