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Evaluation of experimental stress–strain dependence in thermally cycled Al thin film on Si(100)

Published online by Cambridge University Press:  05 March 2012

J. Keckes
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences, Institute of Metal Physics, University of Leoben and Materials Center, Leoben, Austria
M. Hafok
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences, Institute of Metal Physics, University of Leoben and Materials Center, Leoben, Austria
E. Eiper
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences, Institute of Metal Physics, University of Leoben and Materials Center, Leoben, Austria
A. Hofer
Affiliation:
Erich Schmid Institute for Material Science, Austrian Academy of Sciences, Institute of Metal Physics, University of Leoben and Materials Center, Leoben, Austria
R. Resel
Affiliation:
Institute of Solid State Physics, Graz University of Technology, Graz, Austria
C. Eisenmenger-Sittner
Affiliation:
Institute of Solid State Physics, Vienna University of Technology, Vienna, Austria
Corresponding
E-mail address:

Abstract

A new method is introduced for the evaluation of experimental stress–strain dependence in thermally cycled thin films. The method is demonstrated on the analysis of an Al thin film on a Si(100) substrate characterized using in situ high-temperature X-ray diffraction 25–450 °C. Diffraction data are used to evaluate in-plane elastic strain in the film as a function of thermal strain originating from the mismatch of thermal expansion coefficients (TECs) between the film and the substrate. The magnitude of the thermal strain is calculated from experimental TECs of the film and the substrate at every measurement temperature. By relating in-plane stresses to thermal strains, an experimental stress–strain dependence for the Al thin film is obtained. The proposed method allows one to identify elastic behavior and to quantify plastic strain in the film. Finally, advantages of the method are discussed in particular its independence from using TECs reported in the literature.

Type
Technical Articles
Copyright
Copyright © Cambridge University Press 2004

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