Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant…
Research Article
Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers
- Published online by Cambridge University Press: 10 February 2011, 3
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Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants
- Published online by Cambridge University Press: 10 February 2011, 9
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Sub-Nm Screening Layer Approach for Ultra Shallow Junction Formation
- Published online by Cambridge University Press: 10 February 2011, 15
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Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects
- Published online by Cambridge University Press: 10 February 2011, 19
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Shallow Boron Implant Activation
- Published online by Cambridge University Press: 10 February 2011, 31
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Sub-30 nm abrupt P+ junction formation with Ge preamorphization and high energy Si Co-implantation
- Published online by Cambridge University Press: 10 February 2011, 37
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Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation
- Published online by Cambridge University Press: 10 February 2011, 43
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Decaborane as Ion Source Material for Boron Implantation
- Published online by Cambridge University Press: 10 February 2011, 49
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Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants
- Published online by Cambridge University Press: 10 February 2011, 55
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Fabrication of Shallow Junctions with Conventional Furnace Equipment by Using Silicon Preimplants
- Published online by Cambridge University Press: 10 February 2011, 65
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Comparison of Ultra-low-energy Ion Implantation of Boron and BF2
- Published online by Cambridge University Press: 10 February 2011, 71
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Defects and Diffusion in Silicon: An Overview
- Published online by Cambridge University Press: 10 February 2011, 79
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Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon
- Published online by Cambridge University Press: 10 February 2011, 91
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Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures
- Published online by Cambridge University Press: 10 February 2011, 97
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The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and Sige
- Published online by Cambridge University Press: 10 February 2011, 103
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The Influence of Damage and Dopant on the Blister Formation in Hydrogen Implanted Silicon
- Published online by Cambridge University Press: 10 February 2011, 109
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Sensitivity of Electrically Active Defect Spectra to Processing Conditions in Mev Heavy Ion Implanted Silicon
- Published online by Cambridge University Press: 10 February 2011, 115
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Modeling of {311} Defects
- Published online by Cambridge University Press: 10 February 2011, 123
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Atomistic Simulations of Damage Evolution in Silicon
- Published online by Cambridge University Press: 10 February 2011, 135
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On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion
- Published online by Cambridge University Press: 10 February 2011, 141
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