Symposium D – Silicon Carbide 2008—Materials, Processing and Devices
Research Article
Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive
- Published online by Cambridge University Press: 01 February 2011, 1069-D05-03
-
- Article
- Export citation
-
Spontaneous and Piezoelectric Polarization Effects on the Frequency Response of Wurtzite Aluminium Gallium Nitride / Silicon Carbide Heterojunction Bipolar Transistors
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-19
-
- Article
- Export citation
-
Point Defects in SiC
- Published online by Cambridge University Press: 01 February 2011, 1069-D03-01
-
- Article
- Export citation
-
Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-04
-
- Article
- Export citation
-
MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C
- Published online by Cambridge University Press: 01 February 2011, 1069-D13-03
-
- Article
- Export citation
-
Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-10
-
- Article
- Export citation
-
Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-18
-
- Article
- Export citation
-
High-frequency electron paramagnetic resonance study of the as deposited and annealed carbon-rich hydrogenated amorphous silicon-carbon films
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-11
-
- Article
- Export citation
-
Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC
- Published online by Cambridge University Press: 01 February 2011, 1069-D03-03
-
- Article
- Export citation
-
Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
- Published online by Cambridge University Press: 01 February 2011, 1069-D04-03
-
- Article
- Export citation
-
Links Between Etching Grooves Of Partial Dislocations And Their Characteristics Determined By TEM In 4H SiC
- Published online by Cambridge University Press: 01 February 2011, 1069-D02-04
-
- Article
- Export citation
-
Effect of SiC Power DMOSFET Threshold-Voltage Instability
- Published online by Cambridge University Press: 01 February 2011, 1069-D11-04
-
- Article
- Export citation
-
Improved SiC Epitaxial Material for Bipolar Applications
- Published online by Cambridge University Press: 01 February 2011, 1069-D05-01
-
- Article
- Export citation
-
Simultaneous Formation of n- and p-Type Ohmic Contacts to 4H-SiC Using the Binary Ni/Al System
- Published online by Cambridge University Press: 01 February 2011, 1069-D09-01
-
- Article
- Export citation
-
Lateral/vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations
- Published online by Cambridge University Press: 01 February 2011, 1069-D05-02
-
- Article
- Export citation
-
Propagation and Density Reduction of Threading Dislocations in SiC Crystals during Sublimation Growth
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-01
-
- Article
- Export citation
-
Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-21
-
- Article
- Export citation
-
Performance of SiC Microwave Transistors in Power Amplifiers
- Published online by Cambridge University Press: 01 February 2011, 1069-D10-05
-
- Article
- Export citation
-
Impact Ionization in Ion Implanted 4H-SiC Photodiodes
- Published online by Cambridge University Press: 01 February 2011, 1069-D07-12
-
- Article
- Export citation
-
Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices
- Published online by Cambridge University Press: 01 February 2011, 1069-D04-04
-
- Article
- Export citation
-