Symposium C – Silicon Front-End Junction Formation-Physics and Technology
Research Article
Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers
- Published online by Cambridge University Press: 17 March 2011, C3.5
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Vibrational Spectra of Nitrogen-Oxygen Defects in Nitrogen Doped Silicon using Density Functional Theory
- Published online by Cambridge University Press: 17 March 2011, C8.18
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Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI
- Published online by Cambridge University Press: 17 March 2011, C3.8
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Suppression of Boron Diffusion by Fluorine Implantation in Preamorphized Silicon
- Published online by Cambridge University Press: 17 March 2011, C5.9
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Diffusion of Fluorine at High Concentration in Silicon: Experiments and Models
- Published online by Cambridge University Press: 17 March 2011, C8.13
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The Effect of Environmental Chemistry on the Pb Assisted Stress Corrosion Cracking Susceptibility of Mill-Annealed Alloy 22 and GTAW Weldments
- Published online by Cambridge University Press: 17 March 2011, CC1.11
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Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node
- Published online by Cambridge University Press: 17 March 2011, C5.8
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Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node
- Published online by Cambridge University Press: 17 March 2011, C10.5
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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer
- Published online by Cambridge University Press: 17 March 2011, C4.7
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Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field- Effect Transistors
- Published online by Cambridge University Press: 17 March 2011, C2.5
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Post-Anneal Stress Reduction of 200 mm Silicon Wafers in Single Wafer Rapid Thermal Annealing
- Published online by Cambridge University Press: 17 March 2011, C5.10
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Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
- Published online by Cambridge University Press: 17 March 2011, C4.16
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Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures
- Published online by Cambridge University Press: 17 March 2011, C3.3
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Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe
- Published online by Cambridge University Press: 17 March 2011, C11.6
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Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers
- Published online by Cambridge University Press: 17 March 2011, C11.10
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Interactions of Indium, Arsenic and Carbon in Silicon Using the Pseudopotential Technique
- Published online by Cambridge University Press: 17 March 2011, C8.4
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Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing
- Published online by Cambridge University Press: 17 March 2011, C2.4
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Enhancement of Boron Activation in Shallow Junctions by Hydrogen
- Published online by Cambridge University Press: 17 March 2011, C7.6
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The Effect of Photoresist Outgassing on Boron Clustering and Diffusion in Low Energy BF2 + Ion Implantation
- Published online by Cambridge University Press: 17 March 2011, C7.5
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Ni Silicide Morphology On Small Features
- Published online by Cambridge University Press: 17 March 2011, C4.4
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