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Zone-Melting Recrystallization of Semiconductor Films

  • M. W. Geis (a1), Henry I. Smith (a1), B-Y. Tsaur (a1), John C. C. Fan (a1), D. J. Silversmith (a1), R. W. Mountain (a1) and R. L. Chapman (a1)...

Abstract

The use of zone melting recrystallization (ZMR) to prepare large-grain(and in some cases single-crystal) semiconductor films is reviewed, with emphasis on recent work on Si on SiO2. Encapsulants are generally required to minimize contamination and decomposition, induce a crystalline texture,improve surface morphology and prevent agglomeration. In the case of Si, the solid-liquid interface is faceted, which gives rise to subboundaries. These can be entrained by laterally modulating the temperature through the use of an optical absorber on top of the encapsulant. Control of thermal gradients and in-plane crystallographic orientation are important for reliable entrainment.

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