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ZnxCd1−xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

  • Daiji Noda (a1), Torn Aoki (a1), Yoichiro Nakanishi (a1) (a2) and Yoshinori Hatanaka (a1) (a2)

Abstract

For epitaxial growth of compound Zn1−xCd1−XTe by metal organic chemical vapor deposition (MOCVD), it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth. Cd1−xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffiraction measurements.

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References

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1. Stanley, R. P., Hawdon, B. J., Hegarty, J., Feldman, R. D. and Austin, R. F., Appl. Phys. Lett. 58, p. 2972 (1991).
2. Pelekanos, N. T., Haas, H., Magnea, N., Mariette, H. and Wasiela, A., Appl. Phys. Lett. 61, p. 3154 (1992).
3. James, R. B. Schlesinger, T. E., Land, J. and Schieber, , Semiconductor and Semimetals 43, p. 335 (1995).
4. F Doty, P., Butler, J. F., Schetzina, J. F. and Bowers, K. A., J. Vac. Sci. Technol. B10, p. 1418 (1992).
5. Hatanaka, Y., Aoki, T., Morita, M. and Nakanishi, Y, Appl. Surf Sci. 100/101, p. 621 (1996).

ZnxCd1−xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

  • Daiji Noda (a1), Torn Aoki (a1), Yoichiro Nakanishi (a1) (a2) and Yoshinori Hatanaka (a1) (a2)

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