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ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

  • M. C. Tamargo (a1), J. L. de Miguel (a1), D. M. Hwang (a1), B. J. Skromme (a1), M. H. Meynadier (a1), R. E. Nahory (a1) and H. H. Farrell (a1)...

Abstract

We have grown ZnSe epitaxial layers on bulk GaAs substrates and on GaAs epitaxial layers, with both As-rich and Ga-rich surface terminations. We have also grown ZnSe on AlAs epitaxial surfaces with different As to Al ratios. In all cases, abrupt, layer-by-layer growth is observed on the As-rich surfaces, while 3-dimensional nucleation is observed on the group III-rich surfaces. GaAs was also grown on ZnSe layers. In this case, microtwins form at the interface whose density diminishes as the layer is made thicker. A growth model is proposed consistent with these results which requires over-all electronic balance at the interface.

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1. Tamargo, M. C., de Miguel, J. L., Hwang, D. M. and Farrell, H. H., J. Vac. Sci. Technol. B, Mar.-Apr. (1988).
2. Massies, J., Etienne, P., Dezaly, F. and Linh, N. T., Surf. Sci. 99, 121 (1980).
3. de Miguel, J. L., Tamargo, M. C., unpublished.
4. Farrell, H. H., Tamargo, M. C., de Miguel, J. L., J. Vac. Sci. Technol. B, Mar.–Apr. (1988).
5. Harrison, W. A., Kraut, E. A., Waldrop, J. R. and Grant, R. W., Phys. Rev. B 18, 4402 (1978).
6. Tu, D.-W. and Kahn, A., J. Vac Sci. Technol. A 3, 922 (1985).

ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

  • M. C. Tamargo (a1), J. L. de Miguel (a1), D. M. Hwang (a1), B. J. Skromme (a1), M. H. Meynadier (a1), R. E. Nahory (a1) and H. H. Farrell (a1)...

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