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ZnO-based p-n Junctions with p-type ZnO by ZnTe Oxidation
Published online by Cambridge University Press: 01 February 2011
Abstract
The fabrication and properties of ZnO-based rectifying p-n and p-i-n junctions are reported. ZnO films with p-type conductivity were obtained by oxidation of ZnTe grown by MBE on GaAs substrate. Insulating and n-type ZnO films were deposited by magnetron sputtering. The processing of p-n junctions into device structures involved the formation of mesa geometry and preparation of ohmic contacts to p- and n-type regions.
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- Copyright © Materials Research Society 2006