Skip to main content Accessibility help
×
Home

ZnO:Al Thin Films by Successive Chemical Solution Deposition for Transistors Applications

  • Luis A. González (a1), Sara E. Ramírez (a1) and Martín I. Pech-Canul (a1)

Abstract

Here, we show results on the deposition of ZnO:Al thin films by the successive ionic layer adsorption and reaction method. The growing of the films was performed by sequentially immersing glass and SiO2/Si substrates in water at temperatures close to the boiling point, a precursor reaction solution, water at room temperature and ultrasonic water bath. The resulting ZnO:Al films were transparent and well adhered to the substrates. From X-ray diffraction analysis was determined that the ZnO:Al films had hexagonal wurtzite structure with preferential orientation along the c-axis. Changes in the morphology of the films were obtained from ellipsoidal-shaped aggregates for the undoped ZnO films to spherical-shaped aggregates for the ZnO:Al films. The optical transparency and bandgap of the ZnO:Al films was about 85% and 3.28 eV, respectively. Thin film transistors were fabricated with ZnO:Al films as active layers. The characterized device had a saturation mobility of 0.048 cm2/V-s, threshold voltage of approximately 16.1 V and a drain current on-to-off ratio (Ion/Ioff) in the order of 103.

Copyright

References

Hide All
1. Zhang, X.-A., Zhang, J.-W., Zhang, W.-F., Wang, D., Bi, Z., Bian, X.-M., and Hou, X., “Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy,” Thin Solid Films, vol. 516, pp. 33053308, Mar. 2008.
2. Lee, D.-H., Park, K.-H., Kim, S., and Lee, S. Y., “Effect of Ag doping on the performance of ZnO thin film transistor,” Thin Solid Films, vol. 520, pp. 11601164, Nov. 2011.
3. Lupan, O., Shishiyanu, S., Ursaki, V., Khallaf, H., Chow, L., Shishiyanu, T., and Sontea, V., “Synthesis of nanostructured Al-doped zinc oxide films on Si for solar cells applications,” Sol. Energy Mater. Sol. Cells, vol. 93, pp. 14171422, 2009.
4. Shrestha, S. P., Ghimire, R., Nakarmi, J. J., and Kim, Y., “Properties of ZnO : Al Films Prepared by Spin Coating of Aged Precursor Solution,” Bull. Korean Chem. Soc., vol. 31, no. 1, pp. 112115, 2010.
5. Yao, P., Hang, S., Wu, M., and Hsiao, W., “Effects of post-deposition heat treatment on the microstructure and properties of Al-doped ZnO thin films prepared by aqueous phase deposition,” Thin Solid Films, vol. 520, pp. 28462854, 2012.
6. Sahay, P. P. and Nath, R. K., “Al-doped ZnO thin films as methanol sensors,” Sensors Actuators B Chem., vol. 134, pp. 654659, 2008.
7. Suzuki, A., Matsushita, T., Wada, N., Sakamoto, Y., and Okuda, M., “Transparent Conducting Al-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition,” J. Appl. Phys., vol. 35, pp. L56L59, 1996.
8. Rakhshani, A. E., “Al-doped zinc oxide films grown by successive chemical solution deposition,” Appl. Phys. A, vol. 92, pp. 413416, May 2008.
9. Gao, X. D., Li, X. M., and Yu, W. D., “Synthesis and optical properties of ZnO nanocluster porous films deposited by modified SILAR method,” Appl. Surf. Sci., vol. 229, pp. 275281, 2004.
10. Cullity, B. D., The determination of crystal structure in Elements of X-Ray Diffraction. Massachusetts: Adisson-Wesley Publishing Company, 1956, pp. 309310.
11. , X. Gao, D. T., Li, X. M., and Yu, W. D., “Structural and morphological evolution of ZnO cluster film prepared by the ultrasonic irradiation assisted solution route,” Thin Solid Films, vol. 484, pp. 160164, 2005.
12. Svensson, B. G., Pearton, S. and Jagadish, P., Oxide Semiconductors, 1st Ed. Academic Press, 2013

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed