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ZnO Nanofibers Doped with Ga, In and Er Fabricated with Electrospinning Technique

  • Aurangzeb Khan (a1), Wojciech M. Jadwisienczak (a2), Saima N. Khan (a3) and Martin E. Kordesch (a4)

Abstract

ZnO nanofibers doped with Ga, In and Er metals have been fabricated by electrospinning technique. The diameter of the fibers was in the range of 0.5-2 μm and the length can be up to several feet. After spinning fabrication step the samples were dried out and annealed at 900 °C in air. Room temperature photoluminescence (PL) spectra measured for undoped and In- and Ga-doped ZnO fiber samples exhibit only a strong near band edge (NBE) emission at ∼380 nm with very weak green band at 525 nm. In contrary, the PL spectrum of Er-doped ZnO fibers shows a very weak NBE and strong green emission band at ∼550 nm at 300 K. The electrospinning mechanism used for the fabrication of nanofibers was found to be productive, simple and easy to implement disregarding of the doping type and concentration.

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Keywords

ZnO Nanofibers Doped with Ga, In and Er Fabricated with Electrospinning Technique

  • Aurangzeb Khan (a1), Wojciech M. Jadwisienczak (a2), Saima N. Khan (a3) and Martin E. Kordesch (a4)

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