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ZnO Light-Emission Array Fabricated into Nanometer-scale Pits on Silicon Substrate

Published online by Cambridge University Press:  01 February 2011

Naoki Ohashi ,
Isao Sakaguchi ,
Takashi Sekiguchi ,
Hajime Haneda ,
Kazuyoshi Kobayashi ,
Hidetoshi Masauda ,
Hirokazu Chazono  and
Masayuki Fujimoto
Naoki Ohashi
Affiliation:
ohashi.naoki@nims.go.jp, National Institute for Mterials Science, Advanced Materials Laboratory, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan, +81-29-860-4665, +81-29-855-1196
Isao Sakaguchi
Affiliation:
Sakaguchi.Isao@nims.go.jp
Takashi Sekiguchi
Affiliation:
Sekiguchi.Takashi@nims.go.jp
Hajime Haneda
Affiliation:
haneda.hajime@nims.go.jp
Kazuyoshi Kobayashi
Affiliation:
ohashi_odekake@hotmail.com
Hidetoshi Masauda
Affiliation:
nimswave@goo.ne.jp
Hirokazu Chazono
Affiliation:
junk_mail_no_more@yahoo.co.jp
Masayuki Fujimoto
Affiliation:
fujimoto@cjr.shizuoka.ac.jp
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Abstract

A nanometer-scale ZnO light emission array device was fabricated using the multi-level metallization technique of the CMOS process. Square arrays of pits with an inverted pyramid shape made from {111}Si planes were formed on a (100)Si substrate using selective etching. ZnO was deposited on the substrate by chemical vapor deposition (CVD), and the surface of the deposited ZnO film was carefully polished by chemical mechanical planarization (CMP). As a result, ZnO-filled nanometer-scale arrays were obtained after removing the ZnO layer except for the ZnO in the pits by CMP. Cathodoluminescence (CL) from the ZnO arrays was observed.

Keywords

plasma-enhanced CVD (PECVD) (deposition)CMPoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-04
Copyright
Copyright © Materials Research Society 2006

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