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Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering on Mylar Substrates at Room Temperature

Published online by Cambridge University Press:  17 March 2011

Elvira Fortunato ,
Patrícia Nunes ,
António Marques ,
Daniel Costa ,
Hugo Águas ,
Isabel Ferreira ,
Maria E. V. Costa  and
Rodrigo Martins
Elvira Fortunato
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Patrícia Nunes
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
António Marques
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Daniel Costa
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Hugo Águas
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Isabel Ferreira
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Maria E. V. Costa
Affiliation:
Department of Ceramics and Glass Engineering/UIMC, University of Aveiro, 3810-193 Aveiro, Portugal
Rodrigo Martins
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
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Abstract

Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.10.1
Copyright
Copyright © Materials Research Society 2001

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References

[1] Fortunato, E., Brida, D., Ferreira, I., Águas, H., Nunes, P., Martins, R., Thin Solid Films 383, 310 (2001).Google Scholar
[2] Zhang, D.H., Yang, T.L., Ma, J., Wang, Q.P., Gao, R.W., Ma, H.L., Applied Surface Science 158, 43 (2000).Google Scholar
[3] Yang, T.L., Zhang, D.H., Ma, J., Chen, Y., Ma, H.L., Thin Solid Films 326, 60 (1998).Google Scholar
[4] Fortunato, E., Nunes, P., Costa, D., Brida, D., Ferreira, I., Martins, R., Vacuum (2001), in print.Google Scholar
[5] Callity, B., “Element of X-ray Diffraction” (Addison-Wesley, London 1959).Google Scholar
[6] Addonizio, M.L., Antonia, A., Cantele, G., Privato, C., Thin Solid Films 349, 93 (1999).Google Scholar
[7] Sarkar, A., Ghosh, S., Chaudhuri, S., Pal, A.K., Thin Solid Films 204, 255 (1991).Google Scholar
[8] Ma, J., Zhang, D., Li, S., Zhao, J., Ma, H., Jpn. J. Appl. Phys. 37, 5614 (1998).Google Scholar
[9] Bond, W.L., J. Appl. Phys. 36, 1674 (1965).Google Scholar