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XRD Texture and Morphology Analysis of Polycrystalline LPCVD Germanium-Silicon

  • Cora Salm (a1), Jos G.E. Klappe (a1), Jisk Holleman (a1), Jan Bart Rem (a1) and Pierre H. Woerlee (a1)...

Abstract

The morphology and texture of polycrystalline LPCVD GexSi1-x alloys have been studied for various deposition temperatures and for x = 0, x = 1 and x ≈ 0.3. The transition temperature of amorphous to polycrystalline growth is much lower for Ge and GexSi1-x than for Si. Just above this transition temperature, we observed a (220) orientation for all polycrystaline layers grown. At elevated temperatures a change to the (004) orientation for poly-GexSi1-x and (331) for poly-Si and poly-Ge is noted.

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XRD Texture and Morphology Analysis of Polycrystalline LPCVD Germanium-Silicon

  • Cora Salm (a1), Jos G.E. Klappe (a1), Jisk Holleman (a1), Jan Bart Rem (a1) and Pierre H. Woerlee (a1)...

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