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XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics

  • T. Ohyanagi (a1), M. Kitamura (a1), S. Kato (a2), M. Araidai (a3), N. Takaura (a1) and K. Shiraishi (a2) (a3)...

Abstract

We studied GeTe structures in topological switching random access memories (TRAMs) with a [GeTe/Sb2Te3] superlattice by using X-ray diffraction (XRD) analysis. We examined the electrical characteristics of the TRAMs deposited at different temperatures. We found that XRD spectra differed between the films deposited at 200 and 240°C and that the differences corresponded to the differences in the GeTe sequences in the films.

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Keywords

XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics

  • T. Ohyanagi (a1), M. Kitamura (a1), S. Kato (a2), M. Araidai (a3), N. Takaura (a1) and K. Shiraishi (a2) (a3)...

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