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X-Ray Section Topography of Hydrogen Precipitates in Silicon

  • S.F. Cui (a1), G.S. Green (a1) and B.K. Tanner (a1)

Abstract

Spherical strain centres produced by annealing of silicon crystals grown in a hydrogen atmosphere have been studied by X-ray section topography. Excellent agreement has been found between experimental images and those simulated by numerical solution of Takagi's equations. The contrast differences between images in four reflections are examined and recommendations made as to the most suitable conditions for the study of oxygen precipitates in processed silicon wafers.

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[1] Cui, S.F., Mai, Z.H. and Quian, L.Z., Scientia Sinica A27, 213 (1984)
[2] Mai, Z.H., Cui, S.F., Lin, J. and Lu, Y., Acta Phys. Sinica 33 922 (1984)
[3] Cui, S.F., Ge, P.W., Zhao, Y.Q. and Wu, L.S., Acta Phys. Sinica 28 791 (1979)
[4] Takagi, S., Acta Cryst. 15 1311 (1962)
[5] Epelboin, Y., Prog. Crystal Growth & Charact. 14 465 (1987)
[6] Epelboin, Y., Materials Sci. and Eng. 73 1 (1985)
[7] Green, G.S., Cui, S.F. and Tanner, B.K., Phil. Mag, (in press)
[8] Green, G.S. and Tanner, B.K., Inst. Phys. Conf. Ser. 87 627 (1987)

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