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X-Ray Scattering Studies of Interfacial Microstructures in Inx, Ga1−x As/GaAs Superlattices

  • Z. H. Ming (a1), Y. L. Soo (a1), S. Huang (a1), Y. H. Kao (a1), K. Stair (a2), G. Devane (a2) and C. Choi-Feng (a2)...

Abstract

Interfacial microstructures in 100-period InxGa1−xAs(15Å)/GaAs(100Å) superlattices grown on GaAs (100) substrates by molecular beam epitaxy were studied by using large angle x-ray scattering techniques. Unusual satellite peaks in the lateral direction parallel to the sample surface were observed in a sample with x = 0.535 grown at 480°C, indicating an in-plane structural ordering. This result is confirmed by high resolution transmission electron microscopy observations that thickness modulation in the InxGa1−xAs layers gives rise to long-range lateral periodic arrays of cluster-like microstructures with spacing on the order of a few hundred Ångstroms. This thickness modulation is found to occur only in [110] direction, thus the material can be viewed as a somewhat disordered array of grown-in parallel quantum wires.

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X-Ray Scattering Studies of Interfacial Microstructures in Inx, Ga1−x As/GaAs Superlattices

  • Z. H. Ming (a1), Y. L. Soo (a1), S. Huang (a1), Y. H. Kao (a1), K. Stair (a2), G. Devane (a2) and C. Choi-Feng (a2)...

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