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X-Ray Photoelectron Diffraction Measurements of Hexagonal GaN(0004) Thin Films

Published online by Cambridge University Press:  10 February 2011

R. Denecke ,
J. Morais ,
C. Wetzel ,
J. Liesegang ,
E. E. Haller  and
C. S. Fadley
R. Denecke
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Physics, University of California, Davis, Davis, CA 95616, USA
J. Morais
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
C. Wetzel
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
J. Liesegang
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Materials Science, University of California, Berkeley, Berkeley, CA 94720, USA
C. S. Fadley
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Physics, University of California, Davis, Davis, CA 95616, USA
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Abstract

We report on the first scanned-angle x-ray photoelectron diffraction measurements on GaN(0001) in the wurtzite structure, as grown on sapphire substrates using MOCVD. These as-grown samples reveal forward scattering peaks in agreement with a theoretical calculation using a single scattering cluster calculation. The surface contamination by O and C does not exhibit any clear structure. From the combination of experiment and theoretical calculation and from a simple intensity ratio argument the surface termination for these samples could be determined to be N. The data also indicate that C is on average closer to the GaN surface than O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 263
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Sasaki, T., J. Crystal Growth 129, 81 (1993)Google Scholar
2. Metzger, Th., Angerer, H., Ambacher, O., Stutzmann, M., Born, E., Phys. Stat. Sol. (b) 193, 391 (1996)Google Scholar
3. Osterwalder, J., Sagurton, M., Orders, P. J., Fadley, C. S., Hermsmeier, B. D., Friedman, D. J., J. Electr. Spectr. Relat. Phenom. 48, 55 (1989);Google Scholar
Kim, Y.J., Ph.D. thesis (University of Hawaii, 1995).Google Scholar
4. Bermudez, V. M., J. Appl. Phys. 80, 1190 (1996)Google Scholar
5. Rehr, J. J. and Albers, R. C., Phys. Rev. B 41, 2974 (1993).Google Scholar
6. Asif Khan, M., Kuznia, J. N., Olson, D. T., Kaplan, R., J. Appl. Phys. 73, 3108 (1993)Google Scholar