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X-Ray Diffraction Analysis of GaN and AlGaN

Published online by Cambridge University Press:  11 February 2011

H. Kang ,
N. Spencer ,
D. Nicol ,
Z. C. Feng ,
I. Ferguson ,
S. P. Guo ,
M. Pophristic  and
B. Peres
H. Kang
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A
N. Spencer
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A
D. Nicol
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A
Z. C. Feng
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A
I. Ferguson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A
S. P. Guo
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerest, NJ 08873, U.S.A
M. Pophristic
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerest, NJ 08873, U.S.A
B. Peres
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerest, NJ 08873, U.S.A
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Abstract

In this paper, threading dislocation densities in GaN and AlGaN epitaxial layers have been evaluated using two different X-ray analysis techniques; a Williamson Hall (WH) plot and reciprocal space mapping (RSM). GaN and AlGaN have crystalline growth composed of columnar structures that can be estimated by coherence length and angular misorientation measured by X-ray. A WH plot can provide information about coherence length and tilt angle from a linear fit to the linewidth of the triple axis rocking curve (000l) symmetric reflections. RSM is typically used to obtain this data, but it is more involved in technique. The two dominant components of threading dislocation densities (screw and edge types) in the GaN and AlGaN epitaxial layers were found to be similar by both techniques. The treading dislocation density correlates to the size of columnar structure as determined by coherence length, tilt angle, and twist angle. The effect of Al composition in AlGaN alloys on these dislocation densities was investigated and found to depend on strongly on the type of nucleation layer, GaN or AlN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.12
Copyright
Copyright © Materials Research Society 2003

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References

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