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X-Ray Characterization of Nanostructured Semiconductor Short-Period Superlattices

Published online by Cambridge University Press:  11 February 2011

Jianhua Li ,
S. C. Moss ,
V. Holy ,
A.G. Norman ,
A. Mascarenhas  and
J.L. Reno
Jianhua Li
Affiliation:
Physics Department, University of Houston, Houston, TX 77204–5005, U.S.A.
S. C. Moss
Affiliation:
Physics Department, University of Houston, Houston, TX 77204–5005, U.S.A.
V. Holy
Affiliation:
Institute of Condensed Matter Physics, Faculty of Science, Masaryk University, 61137 Brno, Czech Republic
A.G. Norman
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
J.L. Reno
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, U.S.A.
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Abstract

Spontaneous lateral composition modulation during semiconductor thin film growth offers a particularly versatile and cost-effective approach to manufacture nanoscale devices. Recent experimental and theoretical studies have revealed that regular lateral composition modulation can be achieved via MBE growth of the so-called short-period superlattices and can be optimized via appropriate control of the global strain, substrate surface, and processing conditions. To characterize this phenomenon, we used synchrotron x-ray scattering to identify the interfacial morphology and laterally modulated composition profile of nearly strain-balanced InAs/AlAs short-period superlattices. Our results were compared with a theoretical model. It is shown that the lateral composition modulation is predominately caused by a vertically correlated morphlogical undulation of the superlattice layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W20.2
Copyright
Copyright © Materials Research Society 2003

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References

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