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X-RAY and Electron Diffraction Studies of AS-Deposited rf Sputtered Thin Films of lrO2

Published online by Cambridge University Press:  15 February 2011

I. T. Penfold
Affiliation:
Department of Physics, University of Houston, Houston, TX 77204–5506
S. C. Moss
Affiliation:
Department of Physics, University of Houston, Houston, TX 77204–5506
J. Kulik
Affiliation:
Texas Center for Superconductivity, University of Houston, TX 77204–5932
K. G. Kreider
Affiliation:
Process Measurement Division, NIST, Gaithersburg, MD 20899.
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Abstract

Iridium oxide films produced by reactive sputtering (SIROFs) have considerably higher densities than those made by other techniques such as the anodic reaction at metal surfaces which contain pores and Microvoids. It has been previously reported that SIROFs deposited with substrate temperatures of 300K are amorphous. Here we report x-ray and electron diffraction measurements on SIROFs deposited on Al2O3, Si, NaCI and MgO substrates at 40°C. The x-ray diffraction patterns, I(Q), show “diffuse” structure that extends to beyond Q(=4εsinθ/) =10Â−1. We show that it is possible to reproduce qualitatively the main features of the diffraction pattern by convolving the crystalline rutile powder pattern with a Lorentzian profile. The width of this profile is compatible with that determined from the Scherrer equation although significant peak shifts and texture are observed. This analysis reveals that as-deposited SIROFs are crystalline with particle sizes in the range 25À to 35Å rather than amorphous (for which no crystalline model would be appropriate). The electron microdiffraction data are also consistent with a crystallite size of a few nm and high resolution TEM reveals lattice fringes from crystallites few nm in size. The peak shifts, however, remain to be explained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Mclntyre, J. D. E., Peck, W. F. and Nakahara, S., J. Electrochem. Soc., 127, 1264 (1980).Google Scholar
2. Hackwood, S., Dayem, A. H. and Beni, G., Phys. Rev. B 26 471 (1982).Google Scholar
3. Hackwood, S., Schiavone, L. M., Dautremont-Smith, W. C. and Beni, G., J. Electrochem. Soc., 128, 2569 (1981).Google Scholar
4. Tarlov, M. J., Semancik, S. and Kreider, K. G., Sensors and Actuators, B1 293 (1990).Google Scholar
5. Kreider, K. G., Semencik, S. and Erickson, J. W. in Proc. 4th Int. Conf. Solid State Sensors and Actuators (Transducers ‘87), Tokyo, Japan, June 2–5, 1987, 734.Google Scholar
6. Kreider, K. G., J. Vac. Technol., A4 626 (1986).Google Scholar
7. Swanson, H. E., Morris, M. C. and Evans, E. H., NBS Monograph 25, Sec 4, 19 (1965).Google Scholar