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X-Ray Absorption Fine Structure Applied to the Study of Systems with Lattice Instabilities

  • J. MUSTRE DE Leon (a1), S. D. Conradson (a2), T. Tyson (a3), A. R. Bishop (a2), M. Salkola (a2), F.J. Espinosa (a1) and J. L. Peña (a1)...

Abstract

We present a simplified model of electrons and phonons in a three-site cluster as a paradigm of a system exhibiting a lattice instability. We point out the utility of X-ray absorption fine structure (XAFS) in the study of materials where the coupling between electrons and phonons leads to the appearance of such lattice instabilities. As examples of these systems, we present X-ray absorption fine structure (XAFS) measurements on magnetic manganese oxide materials and II-VI semiconductors. Both of these systems exhibit local lattice instabilities which are reflected in the transport properties. In the case of the manganese oxide La0.67Ca0.33MnO3 we observe a change in the Mn-O local structure accompanying the ferromagnetic and metal-insulator transitions. For In doped CdTe we observe the appearance of a lattice distortion centered at the Cd atoms as the In concentration is increased. This distortion is associated with the trapping of free charge carriers, leading to the saturation of the conductivity as the In concentration increases.

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