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Xps Studies of Chlorine Etching Interactions with GaAs(100)
Published online by Cambridge University Press: 21 February 2011
Abstract
GaAs (100) substrates have been chlorinated with both atomic and molecular beams of chlorine under ultra high vacuum conditions. X-ray photoelectron spectra of the resulting samples indicate that at a substrate temperatures of 130 K, Cl atoms efficiently penetrate the GaAs lattice forming Ga and As chloride species. Exposure to Cl atoms at 173 K results in desorption of As, leaving GaClx species behind. Molecular chlorine reacts much less efficiently.
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- Copyright © Materials Research Society 1990
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