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Xps Analysis of Y-Ba-Cu-O and Zr-O Thin Films and Interfaces with Silicon Substrates

Published online by Cambridge University Press:  28 February 2011

D.B. Fenner ,
A.M. Viano ,
G.A.N. Connell ,
J.B. Boyce ,
D.K. Fork ,
F.A. Ponce  and
J.C. Tramontana
D.B. Fenner
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304. Physics Department, Santa Clara University, Santa Clara, CA 95053.
A.M. Viano
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304. Physics Department, Santa Clara University, Santa Clara, CA 95053.
G.A.N. Connell
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
J.B. Boyce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
D.K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304. Applied Physics Department, Stanford University, Stanford, CA 94305.
F.A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
J.C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
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Abstract

Thin films of Y1Ba2Cu3Ox,ZrO2, and yttria-stabilized zirconia (YSZ) have been deposited on Si(100) by the UV-laser ablation technique, and characterized by several techniques including x-ray photoemission spectroscopy (XPS) and cross-sectional transmission electron microscopy (XTEM). Si substrates were prepared by several techniques including thermal oxidation, and oxide etching and passivation by hydrogen termination. Certain of these YBCO films (= 250 nm thick) deposited on YSZ buffer layers have excellent superconducting properties. Other YBCO and zirconia films, deposited to 2-5 nm thickness and transferred under dry N2 into UHV, allowed XPS evaluation of the thermal and chemical stability of the interfaces and nearby regions. 2-nm films of YBCO on 15-nm films of SiO2/Si, deposited at 550–670 °C, showed Cu 2p core-level XPS lines similar to those of bulk YBCO (i.e., Cu II) but with two components due to reactions. The Si 2p line showed formation of silica on the YBCO surface at 670 °C and of silicate at 550 °C. XTEM lattice images showed that use of H-terminated Si produced superior interfaces with the zirconia films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1005
Copyright
Copyright © Materials Research Society 1990

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References

1 Venkatesan, T., Chase, E.W., Wu, X.D., Inam, A., Chang, C.C., and Shokoohi, F.K., Appl. Phys. Lett. 53, 243 (1988).Google Scholar
2 Berberich, P., Tate, J., Dietsche, W., and Kinder, H., Appl. Phys. Lett. 53, 925 (1988).Google Scholar
3 Fenner, D.B., Fork, D.K., Boyce, J.B., Connell, G.A.N., and Viano, A.M., Int. Conf. Materials and Mechanisms of Superconductivity, Stanford, July 1989, in Physica C, edited by Phillips, N.E., Shelton, R.N., and Harrison, W.A. (in press).Google Scholar
4 Fermer, D.B., Viano, A.M., Boyce, J.B., Connell, G.A.N., Ponce, F.A., and Tramontana, J.C., (to be published).Google Scholar
5 Fukumoto, H., Imura, T., and Osaka, Y., Jap. J. Appl. Phys. 27, L1404 (1988).Google Scholar
6 Tietz, L.A., Carter, C.B., Lathrop, D.K., Russek, S.E., Buhrman, R.A., Michael, J.R., J. Mater. Res. 4, 1072 (1989).Google Scholar
7 Fermer, D.B., Biegelsen, D.K., and Bringans, R.D., J. Appl. Phys. 66, 419 (1989).Google Scholar
8 Shen, Z., Allen, J.W., Yeh, J.J., Kang, J.-S., Ellis, W., Spicer, W., Lindau, I., Maple, M.B., Dalichaouch, Y.D., Torikachvili, M.S., Sun, J.Z., and Geballe, T.H., Phys. Rev. 36, 8414 (1987).Google Scholar
9 Chang, C.C., Hegde, M.S., Wu, X.D., Dutta, B., Inam, A., Venkatesan, T., Wilkens, B.J., and Wachtman, J.B. Jr., Appl. Phys. Lett. 55,1680 (1989).Google Scholar