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Windowless Wide Area Vuv Lamp for Energy Assisted CVD*

Published online by Cambridge University Press:  25 February 2011

Z. Yu
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
T. Y. Sheng
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
H. Zarnani
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
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Abstract

A ring shaped cold cathode electron gun provides a large area disc shaped vacuum ultraviolet (VUV) light source up to 20 cm in diameter. The windowless disc plasma is also a source of radical and excited atomic gas species. VUV photons, excited species, and radicals can all assist dissociation of CVD feedstock reactants via volume photo-absorption and sensitized atom-molecule collisions, respectively. In addition, the excited radical flux and VUV impingement on the film may also assist heterogeneous surface reactions and increase surface mobility of absorbed species. Thin films of aluminum nitride, Si3N4, and hydrogenated amorphous silicon have been deposited at temperatures between 100°C - 400°C. The deposited films show significant improvement over other photoassisted CVD processes in the film quality achieved, the substrate temperature required and the maximum deposition rates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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Footnotes

*

Supported by Naval Research Laboratory, National Science Foundation and Applied Electron Corporation.

References

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