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Wide-gap CIGS solar cells with Zn 1-y Mg y O transparent conducting film

  • K. Matsubara (a1), A. Yamada (a1), S. Ishizuka (a1), K. Sakurai (a1), H. Tampo (a1), Y. Kimura (a2), S. Nakamura (a2), M. Yonemura (a2), H. Nakanishi (a2) and S. Niki (a1)...

Abstract

Zn 1-y Mg y O bandgap controllable transparent conducting films were used for the wide-gap Cu(In 1-x Ga x )Se 2 thin film solar cells. Undoped Zn 1-y Mg y O and Al doped Zn 1-y Mg y O films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn 1-y Mg y O films with Mg content y of up to 0.10 were examined. For Cu(In 1-x Ga x )Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn 1-y Mg y O and Al doped Zn 1-y Mg y O instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

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Wide-gap CIGS solar cells with Zn 1-y Mg y O transparent conducting film

  • K. Matsubara (a1), A. Yamada (a1), S. Ishizuka (a1), K. Sakurai (a1), H. Tampo (a1), Y. Kimura (a2), S. Nakamura (a2), M. Yonemura (a2), H. Nakanishi (a2) and S. Niki (a1)...

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