Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-21T04:46:05.224Z Has data issue: false hasContentIssue false
  • English
  • Français

The Wet Etching of CdZnTe Substrates for OMVPE Growth

Published online by Cambridge University Press:  25 February 2011

T.W. Chan ,
X.J. Bao ,
I.H. Oh ,
P.J. Sides  and
E.I. Ko
T.W. Chan
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
X.J. Bao
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
I.H. Oh
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
P.J. Sides
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
E.I. Ko
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
Get access

Abstract

The etching of CdZnTe substrates by bromine-methanol solutions was studied by chemi-mechanical polishing. Over a bromine concentration of 0.5 to 3.5 volume percent, the etch rates varied linearly with bromine concentration, were independent of substrate orientation, and, within experimental uncertainties, were identical to those for the etching of CdTe. The etched samples were used as substrates for the organometallic vapor phase epitaxy (OMVPE) growth of CdTe in an impinging jet reactor. The bromine concentration used in etching did not affect the growth rate or the morphology of the deposited CdTe films, but a higher defect density was found for the film grown on a substrate with the orange-peel structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 275
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fuller, C.S. and Allison, H.W., J. Electrochem. Soc. 109, 880 (1962).Google Scholar
2. Ahlgren, W.L., Johnson, S.M., Smith, E.J., Ruth, R.P., Johnston, B.C., Kalisher, M.H., Cockrum, C.A., James, T.W. and Arney, D.L., J. Vac. Sci. Technol. A7(2), 331 (1989).CrossRefGoogle Scholar
3. Gaugash, P. and Milnes, A.G., J. Electrochem. Soc. 128, 924 (1981).Google Scholar
4. Riedinger, S.L., Snyder, D.W., Ko, E.I. and Sides, P.J., submitted to Mat. Sci. Engr. B. Google Scholar
5. Sze, S.M., VLSI Technology, (McGraw-Hill, New York, 1983), p. 508.Google Scholar
6. Snyder, D.W., Ko, E.I. and Sides, P.J., Appl. Phys. Lett. 56(12), 1166 (1990).Google Scholar
7. Dean, P.J., Prog. Crystal Growth and Characterization 5, 89 (1982).CrossRefGoogle Scholar
8. Gentzler, M.B., Ko, E.I., Sides, P.J. and Bowman, P.T., Mat. Res. Soc. Symp. Proc. 204, 237 (1991).Google Scholar
9. Snyder, D.W., PhD thesis, Carnegie Mellon University, 1991.Google Scholar
10. Pautrat, J.L., Francou, J.M., Magnea, N., Molva, E., and Saminadayar, K., J. Cryst. Growth 72, 194 (1985).Google Scholar
11. Garcia-Garcia, J., Gonzalez, J., and Mendoza-Alvarez, J.G., J. Appl. Phys. 67, 3810 (1990).Google Scholar