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Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

  • K. C. Zeng (a1), M. Smith (a1), J. Y. Lin (a1), H. X. Jiang (a1), H. Tang (a2), A. Salvador (a2), W. Kim (a2), H. Morkoc (a2) and M. Asif Khan (a3)...

Abstract

Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

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Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

  • K. C. Zeng (a1), M. Smith (a1), J. Y. Lin (a1), H. X. Jiang (a1), H. Tang (a2), A. Salvador (a2), W. Kim (a2), H. Morkoc (a2) and M. Asif Khan (a3)...

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