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W and Related Alloys Deposited onto InP by RT-LPCVD

Published online by Cambridge University Press:  25 February 2011

A. Katz ,
A. Feingold ,
S. J. Pearton ,
E. Lane ,
S. Nakahara  and
M. Geva
A. Katz
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974–0636
A. Feingold
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974–0636
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974–0636
E. Lane
Affiliation:
Solid State Technology, 9999 Hamilton Boulevard, Breinigsville, PA 18031–9359
S. Nakahara
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974–0636
M. Geva
Affiliation:
Solid State Technology, 9999 Hamilton Boulevard, Breinigsville, PA 18031–9359
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Abstract

Tungsten (W) films were deposited onto InP in a cold wall, rapid thermal low-pressure chemical vapor deposition (RT-LPCVD) reactor, from a tungsten hexafluoride (WF6) gas reduced by hydrogran (H2). W films of thickness 50 to 450 nm were deposited in the temperature range of 350° to 550°C, pressure range of 0.5 to 4.5 Torr and deposition rates up to 4 nm/sec with an apparent activation energy of about 1.12 eV. The film stress varied depending upon the deposition pressure, from low compressive for deposition at 0.5 Torr to moderate tensile for deposition at about 4.5 Torr. The films were aged at temperatures as high as 300°C for about 800 hr and exhibited an excellent mechanical stability. Post-deposition sintering of the W films at temperatures up to 600°C led to reduction of the resistivity with a minimum value of about 55μΩ-crn as a result of heating at 500°C. Conditions for both selective and blanket deposition were defined, and a dry etching process for further geometrical definitions of the films was developed, providing etch rates of 40 to 50 nm·sec-1. This report reflects the first attempt to deposit W films onto III-V semiconductor at a very high rate by means of RT-LPCVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 67
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Katz, A., Chu, S. N. G., Thomas, D. M., and Dautremont-Smith, W. C., SPIE J. 1144, 321 (1989).Google Scholar
2. Katz, A., Feingold, A., Pearton, S. J., Nakahara, S., Ellington, M., Chakrabarti, U. K., Geva, M., and Lane, E., J. Appl. Phys. 70, 3666 (1991).CrossRefGoogle Scholar
3. Katz, A., Pearton, S. J., and Geva, M., Appl. Phys. Lett. 59, 286 (1991).CrossRefGoogle Scholar
4. Green, M. L. and Levy, R. A., J. Electrochem. Soc. 136, 1243 (1985).CrossRefGoogle Scholar
5. Broadbent, E. C., Morgan, A. E., DeBlasi, J. M., Van-der-Putte, P., Conkman, B., Burrow, B. J., Sadana, D. K., and Reader, A., J. Electrochem. Soc. 133, 1715 (1986).CrossRefGoogle Scholar
6. Paine, D. C., Bravman, J. C., and Yang, C. Y., Appl. Phys. Lett. 50, 498 (1987).CrossRefGoogle Scholar
7. Broadbent, E. K. and Stacy, W. T., Solid State Technol. 2, 51 (1985).Google Scholar
8. Itoh, H., Moriya, T., and Kashiwagi, M., Solid State Techno. 83, 1 (1987).Google Scholar
9. Blewer, R. S., Solid State Technol. 29, 117 (1986).Google Scholar
10. Levy, R. A. and Green, M. L., J. Electrochem. Society 134, 37C (1977).CrossRefGoogle Scholar
11. Broadbent, E. K. and Ramiller, C. L., J. Electrochem. Soc. 134, 2345 (1987).Google Scholar
12. Wong, M., Kobayashi, N., Browning, R., Paine, D., and Saraswat, K. C., J. Elechtroc. Soc. 134, 2339 (1987).CrossRefGoogle Scholar
13. Foster, R. F., Tseng, S., Lane, L. and Ann, K. Y. in Tungsten and Other Refractory Metals for VLSI Applications III, edited Wells, V. A., MRS (1988), p. 55.Google Scholar
14. Katz, A., Feingold, A., Pearton, S. J., and Chakrabarti, V. K., Appl. Phys. Lett. 59, 579 (1991).CrossRefGoogle Scholar
15. Katz, A. and Dautremont-Smith, W. C., J. Appl. Phys. 67 6237 (1990).CrossRefGoogle Scholar
16. Pearton, S., Katz, A., and Feingold, A., Semicond. Sci. Technol. 6, 830 (1991).CrossRefGoogle Scholar
17. Binary Alloy Phase Diagrams, edited by Massalski, T. R. B. (ASM International Publications, Ohio, 1990), 2994, p. 2314.Google Scholar
18. Katz, A., Pearton, S. J., and Geva, M., J. Appl. Phys. 68, 3110 (1990).CrossRefGoogle Scholar