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VSS-induced NiSi2 Nanocrystal Memory

Published online by Cambridge University Press:  31 January 2011

Bei Li  and
Jianlin Liu
Bei Li
Affiliation:
bli003@ucr.edu, University of California, Riverside, Electrical Engineering, Riverside, California, United States
Jianlin Liu
Affiliation:
jianlin@ee.ucr.edu, University of California, Riverside, Electrical Engineering, Riverside, California, United States
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Abstract

NiSi2 nanocrystals were synthesized and used as the floating gate for nonvolatile memory application. Vapor-solid-solid mechanism was employed to grow the NiSi2 nanocrystals by introducing SiH4 onto the Ni catalysts-covered SiO2/Si substrate at 600°C. The average size and density of the NiSi2 nanocrystals are 7∼10nm and 3×1011 cm-2, respectively. Metal-oxide-semiconductor field-effect-transistor memory with NiSi2 nanocrystals was fabricated and characterized. Programming/erasing, retention and endurance measurements were carried out and good performances were demonstrated.

Keywords

memorynanostructureNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H01-09
Copyright
Copyright © Materials Research Society 2009

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