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Voltage-Tunable PtSi/SiGe/Si Schottky Diode Infrared Detectors

Published online by Cambridge University Press:  15 February 2011

Jorge R. Jimenez
Jorge R. Jimenez*
Affiliation:
Faura Scientific, Inc., Bedford, MA 01730
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Abstract

The theory of recently-reported cut-off wavelength-tunable silicide/SiGe/Si detectors is presented. The SiGe layer provides voltage-tunable barrier heights by tailoring the shape of the Schottky barrier. The increased tunability provided by the SiGe layer is now understood as being due to two related effects: first, keeping the barrier peak position fixed with bias, and second, moving the barrier peak further away from the interface. The second effect decreases quantum efficiency, which depends on the peak-to-interface distance. However, maximizing the first effect allows us to obtain desired levels of tunability without potential decreases in quantum efficiency. For voltage-switched, dual-window imaging, a tunable range of 5-12 μm is required over moderate voltages (10-15 volts), for which calculated detector parameters are total SiGe thicknesses (uniform plus graded) of ∼ 60-100 Å and boron doping levels of ∼ 4-8 × 1016 cm−3 throughout the depletion layer width (∼ 4000 Å, in the SiGe and in the underlying Si).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 419
Copyright
Copyright © Materials Research Society 1996

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References

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