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Visible Photoluminescence From Rapid-Thermal-Oxidized Porous Silicon

Published online by Cambridge University Press:  25 February 2011

Y. Kanemitsu ,
T. Matsumoto ,
T. Futagi  and
H. Mimura
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, lbaraki 305, Japan
T. Matsumoto
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, lbaraki 305, Japan
T. Futagi
Affiliation:
Electronics Research Laboratory, Nippon Steel Corporation, Kanagawa 229, Japan
H. Mimura
Affiliation:
Electronics Research Laboratory, Nippon Steel Corporation, Kanagawa 229, Japan
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Abstract

We have studied the origin of the visible photoluminescence (PL) from oxidized porous Si. The hydrogen–passivated surface of porous Si prepared by electrochemical etching is converted to stable silicon oxides by rapid–thermal–oxidization processes. At low oxidation temperature (Tox), the PL spectrum with a peak near 700 nm is observed. At high Tox above 800 °C, a strong blue PL is observed near 400 nm. We discuss the origin of blue and red PL by employing the results of ab initio electronic structure calculations of silicon–oxygen compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 205
Copyright
Copyright © Materials Research Society 1993

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