We have fabricated porous silicon carbide using single crystal 6H–SiC that has a wider indirect bandgap than silicon crystal prepared by electrochemical anodization. We have observed intense blue–green luminescence with the peak wavelength of around 500 nm at room temperature. The luminescence intensity is about five hundred times stronger than that of free electron to acceptor recombination in 6H–SiC crystal. This porous SiC offers an intense blue–green luminescent material. The results of structural analysis (secondary electron microscope analysis) and optical measurements (photoluminescence spectrum, Raman spectrum, and picosecond luminescence decay) suggest that the origin of the intense blue–green luminescence is the same as that of the intense red luminescence of porous silicon.