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Virtual Fabrication of Small Ga-As/P and In-As/P Clusters with Pre-Designed Electronic Pattern Structure

Published online by Cambridge University Press:  26 February 2011

Liudmila A. Pozhar ,
Alan T. Yeates ,
Frank Szmulowicz  and
William C. Mitchel
Liudmila A. Pozhar
Affiliation:
Western Kentucky University, Department of Chemistry, TCCW 444, 1 Big Red Way, Bowling Green, KY 42101, U.S.A.
Alan T. Yeates
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Polymer Materials Branch (AFRL/MLBP), 2941. Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
Frank Szmulowicz
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Sensor Materials Branch (AFRL/MLPS), 3005. Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
William C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Sensor Materials Branch (AFRL/MLPS), 3005. Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
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Abstract

Quantum statistical physics methods [1] relate charge transport properties of small atomic clusters (or small quantum dots, QDs) to their equilibrium electronic energy level spectra. Thus, electronic energy level computations for such systems provide a foundation for realization of a virtual (i.e., fundamental theory- based, computational) approach [2] to synthesis of sub-nanoscale materials with pre-designed charge transport properties. In this publication the Hartee-Fock (HF) electronic energy level spectra of several pre-designed small clusters of Ga, As, In and P atoms are studied and compared to those of the corresponding clusters grown at spatially unrestricted conditions. Influence of clusters' growth conditions on formation and structure of their valence and conduction bands is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B1.8
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. See, for example, L.A. Pozhar, Charge Transport in Inhomogeneous Quantum Systems in Weak Electro-Magnetic Fields: Two-Time Green's Function Approach (2004, in press); L.A. Pozhar, Mat. Res. Soc. Proc, 789, N3.10 (2004), etc.Google Scholar
2. Pozhar, L.A., Yeates, A.T., Szmulowicz, F. and Mitchel, W.C., Small Atomic Clusters as Prototypes for Sub-Nanoscale Heterostructure Units with Pre-Designed Electronic Properties (2004, in press);Google Scholar
Pozhar, L.A., Yeates, A.T., Szmulowicz, F. and Mitchel, W.C., Mat. Res. Soc. Proc, 788, L11.40 (2004); L.A. Pozhar, Ibid., 790, P5.8 (2004), etc.Google Scholar
3. See, for example, Singh, A.K. et al., Phys. Rev. Lett. 91, 146802 (2003);Google Scholar
Kumar, V. and Kawazoe, Y., Phys. Rev. Lett. 90, 055502 (2003), etc.Google Scholar
4. Fodor, P.S., Tsoi, G.M. and Wenger, L.E., J. Appl. Phys. 91, 8186 (2002).Google Scholar
5. Temko, Y. et al., Phys. Rev. B 68, 165310 (2003);Google Scholar
Jenathan, K. et al., Phys. Stat. Sol. (b) 240, 326 (2003).Google Scholar
6. Bryant, G.W. and Jaskolski, W., Mat. Res. Soc. Proc. 789, N13.2 (2004).Google Scholar
7. Schmidt, M.W. et al., J. Comput. Chem. 14, 1347 (1993).Google Scholar