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Variations of Interfacial Roughness with Epilayer Thickness and Scaling Behavior in Si1−x,Gex, Grown on Si(100) Substrates

  • Z. H. Ming (a1), S. Huang (a1), Y. L. Soo (a1), Y. H. Kao (a1), T. Carns (a2) and K. L. Wang (a2)...


Roughness parameters of sample surface and buried interfaces in a series of thin layers of Si0.4 GeO.6 grown on Si(100) by molecular beam epitaxy (MBE) were measured by using the technique of grazing-incidence x-ray scattering (GIXS). The strain in the layer and the critical thickness of the film were determined from x-ray diffraction of the Si(004) peak. The roughness parameters can be described by a scaling-law with an exponent β = 0.71 for both the surface and interfacial roughness. Establishment of a scaling law thus allows a possibility of predicting the interfacial roughness as a function of the epilayer thickness.



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