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Variations of Interfacial Roughness with Epilayer Thickness and Scaling Behavior in Si1−x,Gex, Grown on Si(100) Substrates

  • Z. H. Ming (a1), S. Huang (a1), Y. L. Soo (a1), Y. H. Kao (a1), T. Carns (a2) and K. L. Wang (a2)...

Abstract

Roughness parameters of sample surface and buried interfaces in a series of thin layers of Si0.4 GeO.6 grown on Si(100) by molecular beam epitaxy (MBE) were measured by using the technique of grazing-incidence x-ray scattering (GIXS). The strain in the layer and the critical thickness of the film were determined from x-ray diffraction of the Si(004) peak. The roughness parameters can be described by a scaling-law with an exponent β = 0.71 for both the surface and interfacial roughness. Establishment of a scaling law thus allows a possibility of predicting the interfacial roughness as a function of the epilayer thickness.

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1. Mandelbrodt, B., The Fractal Geometry of Nature (Freeman, New York, 1982).
2. Family, F., Physica A168, 561 (1990); and references therein. 3. M.Kardar, G.Parisi, and Y.C.Zhang, Phys. Rev. Lett. 56, 889 (1986).
4. Lai, Z.W. and Sarma, S. Das, Phys. Rev. Lett. 66, 2348 (1991).
5. Amar, J. G. and Family, F., Phys. Rev. A 41, 3399 (1990).
6. Collins, G.W., Letts, S.A., Fearon, E.M., McEachen, R.L., and Bemat, T.P., Phys. Rev. Lett. 73, 708 (1994).
7. He, Y.-L., Yang, N.-H., Lu, T.-M., and Wang, G.-C., Phys. Rev. Lett. 69, 3770 (1992).
8. Emst, E.-J., Fabre, F., Folkerts, R., and Lapujoulade, J., Phys. Rev. Lett. 72, 112 (1994).
9. Kessler, D., Levine, H., and Sander, L., Phys. Rev. Lett. 69, 100 (1992).
10. You, H., Chiarello, R.P., Kim, H.K., and Vandervoort, K.G., Phys. Rev. Lett. 70, 2900 (1993).
11. Krug, J., Plischke, M., and Siegert, M., Phys. Rev. Lett. 70, 3271 (1993).
12. Yang, H.-N, Lu, T.-M., and Wang, G.-C., Phys. Rev. Lett. 68, 2612 (1992).
13. Ming, Z.H., Krol, A., Soo, Y. L., Kao, Y. H., Park, J. S. and Wang, K. L., Phys. Rev. B 47, 16373 (1993).
14. Hornstra, J. and Bartels, W.J., J. Crystal Growth, 44, 513(1978); P.J. Orders and B.F. Usher, Appl. Phys. Lett. 50, 980 (1987).
15. Ashcroft, N.W. and Mermin, N.D., Solid State Physics, p.447 (Saunders, Philadelphia, 1976).
16. People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985).
17. Vidal, B. and Vincent, P., Appl. Opt. 23, 1794(1984).

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