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Vapor Transport Deposition and Characterization of Polycrystalline CdTe Solar Absorbers

Published online by Cambridge University Press:  01 February 2011

James M. Kestner ,
Sarah McElvain ,
Colin A. Wolden ,
Stephen Kelly ,
Tim R. Ohno ,
Lawrence M. Woods  and
Rosine Ribelin
James M. Kestner
Affiliation:
Departments of Chemical Engineering
Sarah McElvain
Affiliation:
Departments of Chemical Engineering
Colin A. Wolden
Affiliation:
Departments of Chemical Engineering
Stephen Kelly
Affiliation:
Physics, Colorado School of Mines, Golden, CO80401, U.S.A.
Tim R. Ohno
Affiliation:
Physics, Colorado School of Mines, Golden, CO80401, U.S.A.
Lawrence M. Woods
Affiliation:
ITN Energy Systems, 8130 Shaffer Parkway, Littleton, CO 80127-4107, U.S.A.
Rosine Ribelin
Affiliation:
ITN Energy Systems, 8130 Shaffer Parkway, Littleton, CO 80127-4107, U.S.A.
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Abstract

Vapor transport deposition is being developed for high-rate synthesis of CdTe thin films. Films have been deposited at rates in excess of 20 μm/min. Thegrowth ratedependenceon source temperature yielded an apparent activation energy of 42 kcal/mol, in good agreement with the theoretical value for CdTe sublimation (45.7 kcal/mol). For substrate temperatures greater than 400°C the rate limiting step was resublimation. This phenomenon had a dramatic influence on morphology, although x-ray diffraction of all films indicated a strong (111) orientation. A preliminary device optimization investigating the effect of CdTe deposition temperature, post-deposition CdCl2 anneal parameters, alternative back contacts, and high-resistance buffer layers yielded a best cell with efficiency of 9.8% (704 mV Voc, 21.0mA/cm2 Jsc, 66% FF).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.22
Copyright
Copyright © Materials Research Society 2003

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References

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