Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-19T06:08:54.743Z Has data issue: false hasContentIssue false
  • English
  • Français

Vapor Phase Cleaning of Silicon Wafers

Published online by Cambridge University Press:  25 February 2011

Bruce E. Deal  and
C. Robert Helms
Bruce E. Deal
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
C. Robert Helms
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
Get access

Abstract

Vapor phase cleaning of silicon wafers is reviewed. Particular emphasis is placed on oxide etching and removal, including the mechanisms involved in vapor HF etching of silicon oxides. Other items discussed include native oxide formation, impurity removal, and device applications. Future directions involving other chemistries and integrated processing are summarized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 361
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kern, W. and Puotinen, D. A., RCA Review, 11(6),187 (1970).Google Scholar
2. Kern, W. J., Electrochem. Soc. 137,1887 (1990).Google Scholar
3. Lang, G. A. and Stavish, T., RCA Review, 24, 488 (1963).Google Scholar
4. Holmes, P. J. and Snell, J. E., Microelectronics and Reliability, 5, 337 (1966).CrossRefGoogle Scholar
5. Brosheer, J. C., Lenfesty, F. A. and Elmore, K. L., Industrial & Eng. Chem. 39, 423 (1947).Google Scholar
6. Munter, P. A., Aepli, O. T. and Kossatz, R. A., Industrial and Engineering Chemistry 39, 427 (1947).CrossRefGoogle Scholar
7. Munter, P. A., Aepli, O. T. and Kossatz, R. A., Industrial and Engineering Chemistry, 41(2), 1504 (1949).CrossRefGoogle Scholar
8. Beyer, K. D. and Kastl, R. H., U.S. Patent 4,264,374, April 28, 1981.Google Scholar
9. Blackwood, R. D., Biggerstaff, R. L., Clements, D. and Cleavin, R., U.S. Patent 4, 749,440, June 7, 1988.Google Scholar
10. Bersin, R. L. and Reichelderfer, R. F., Solid State Technology 20(4), 78 (1977).Google Scholar
11. Skidmore, K., Semi. Intl. 10(9), 80 (1987).Google Scholar
12. Syverson, D. J. and Duranko, G. T., Solid State Technology 31(10),101 (1988).Google Scholar
13. Cleavelin, D. C. R. and Durnako, G. T., Semi. Intl. 10(11), 94 (1987).Google Scholar
14. Deal, B. E., McNeilly, M. A., Kao, D. B. and deLarios, J. M., Solid State Technology 33(7), 73 (1990).Google Scholar
15. Ito, T., Sugino, R., Watanabe, S., Nara, Y. and Sato, Y., in First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, (Ruzyllo, and Novak, ed.)90–9, p. 114, The Electrochemical Society, (1989).Google Scholar
16. Deal, B. E. and Helms, C. R., in: Handbook of Semiconductor Wafer Cleaning, (Kern, ed.) Noyes, Parkridge (1992).Google Scholar
17. Miki, N., Kikuyama, H., Kawanabe, I., Miyashita, M. and Ohmi, T., IEEE Transactions on Electron Devices 37(1), 107 (1990).Google Scholar
18. Judge, J. S., J. Electrochem. Soc. 118, 1772 (1971).Google Scholar
19. Meieran, E. S., Flinn, P. A. and Carruthers, J. R., Proceedings of the IEEE 75, 908 (1987).CrossRefGoogle Scholar
20. Pool, R., Science 247, 634 (1990).Google Scholar
21. Shimazaki, A., in Defects in Silicon II, (Bullis, , Gosele, and Shimura, ed.)91–9, p. 47, The Electrochemical Society, Inc., (1991).Google Scholar
22. Wong, M., Moslehi, M. M. and Reed, D. W., J. Electrochem. Soc. 138(6),Google Scholar
23. Syverson, D., in 1991 Proceedings, p. 829, Institute of Environmental Sciences, Mount Prospect, IL (1991).Google Scholar
24. Vig, J. R., J. Vac. Sci. Technol. A 3(3),1027 (1985).CrossRefGoogle Scholar
25. Olsen, J. E. and Shimura, F. J., J. Vac Sci. Technol. A7(6), 3275 (1989).Google Scholar
26. Nobinger, G. L., Moskowitz, D. J. and Krusell, W. C., to be published.Google Scholar
27. Ito, T. in: 1991 Proceedings, p. 808, Institute of Environmental Sciences, Mount Prospect, Ill (1991).Google Scholar
28. Kao, D. B., Cairns, B. R. and Deal, B. E., in; Fall Meeting Extended Abstracts, 91–2, p. 802, The Electrochemical Society, Phoenix (1991).Google Scholar
29. Offenberg, M., Liehr, M. and Rubloff, G. W., J. Vac. Sci. Technol. A9, (3),1058 (1991).CrossRefGoogle Scholar
30. Nishioka, Y., daSilva, J. E. F., Wang, Y. and Ma, T. P., IEEE Electron Device Lett. 9, 38 (1988).Google Scholar
31. deLarios, J. M., Kao, D. B., Deal, B. E. and Helms, C. R., J. Electrochem. Soc. 138, 2353 (1991).CrossRefGoogle Scholar
32. Newboe, B., Semi. Intl. 13(8), 82 (1990).Google Scholar
33. Shankar, K., Solid State Technology. 33(10),43 (1990).Google Scholar
34. Burggraaf, P., Semi. Intl. 13(9), 56 (1990).Google Scholar
35. Werkhoven, C. J., Westendorp, J. E. M., Huusen, F. and Granneman, E. H. A., Semi. Intl. 14(6), 228 (1991).Google Scholar
36. Van Leeuwen, C., Semi. Intl. 13(1),68 (1990).Google Scholar