- Cited by 20
Zhao, Bin Wang, Shi-Qing Anderson, Steven Lam, Robbie Fiebig, Marcy Vasudev, P. K. and Seidel, Thomas E. 1996. On Advanced Interconnect Using Low Dielectric Constant Materials as Inter-Level Dielectrics. MRS Proceedings, Vol. 427, Issue. ,
Harrus, A.S. Plano, M.A. Kumar, D. and Kelly, J. 1996. Parylene AF-4: A Low εR Material Candidate For ULSI Multilevel Interconnect Applications. MRS Proceedings, Vol. 443, Issue. ,
Zhao, B. Wang, S.-Q. Fiebig, M. Anderson, S. Vasudev, P.K. and Seidel, T.E. 1996. Reliability and electrical properties of new low dielectric constant interlevel dielectrics for high performance ULSI interconnect. p. 156.
Ganguli, Seshadri Agrawal, Hemant Wang, Bin McDonald, Jack F. Lu, Toh -M. Yang, G.-R. and Gill, William N. 1997. Improved growth and thermal stability of Parylene films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue. 6, p. 3138.
Murarka, Shyam P. 1997. Multilevel interconnections for ULSI and GSI era. Materials Science and Engineering: R: Reports, Vol. 19, Issue. 3-4, p. 87.
Homma, Tetsuya 1998. Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections. Materials Science and Engineering: R: Reports, Vol. 23, Issue. 6, p. 243.
Treichel, H. Ruhl, G. Ansmann, P. Würl, R. Müller, Ch. and Dietlmeier, M. 1998. Low dielectric constant materials for interlayer dielectric. Microelectronic Engineering, Vol. 40, Issue. 1, p. 1.
Erjavec, James Sikita, John Beaudoin, Stephen P. and Raupp, Gregory B. 1999. Wave Polymerization During Vapor Deposition of Porous Parylene-N Dielectric Films. MRS Proceedings, Vol. 565, Issue. ,
Rogojevic, Svetlana Moore, James A. and Gill, William N. 1999. Modeling vapor deposition of low-K polymers: Parylene and polynaphthalene. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue. 1, p. 266.
Lee, Sang-Ho Kwon, Myong-Jong Park, Jin-Goo Kim, Yong-Kweon and Shin, Hyung-Jae 1999. Preparation and characterization of perfluoro-organic thin films on aluminium. Surface and Coatings Technology, Vol. 112, Issue. 1-3, p. 48.
Erjavec, James Sikita, John Beaudoin, Stephen P and Raupp, Gregory B 1999. Novel Parylene-N films deposited at liquid nitrogen temperatures. Materials Letters, Vol. 39, Issue. 6, p. 339.
Shirafuji, Tatsuru Kamisawa, Akira Shimasaki, Takaaki Hayashi, Yasuaki and Nishino, Shigehiro 2000. Plasma enhanced chemical vapor deposition of thermally stable and low-dielectric-constant fluorinated amorphous carbon films using low-global-warming-potential gas C5F8. Thin Solid Films, Vol. 374, Issue. 2, p. 256.
Chiu, Patrick G. Hsu, David T. Kim, Hyung-Kun Shi, Frank G. Nalwa, Hari Singh and Zhao, Bin 2001. Handbook of Advanced Electronic and Photonic Materials and Devices. p. 201.
Maier, G 2001. Low dielectric constant polymers for microelectronics. Progress in Polymer Science, Vol. 26, Issue. 1, p. 3.
Lee, Shih-Wei Kim, Hyungkun Shi, Frank G and Zhao, Bin 2002. Thickness dependent soft-breakdown phenomena of low dielectric constant thin films and corresponding activation energy. Microelectronics Journal, Vol. 33, Issue. 8, p. 605.
Gill, W. N. Rogojevic, S. and Lu, T. 2003. Low Dielectric Constant Materials for IC Applications. Vol. 9, Issue. , p. 95.
Maier, G. 2004. The search for low-/spl epsiv/ and ultra-low-/spl epsiv/ dielectrics: how far can you get with polymers? Part 2: materials, structures, properties. IEEE Electrical Insulation Magazine, Vol. 20, Issue. 3, p. 6.
Kohl, Paul A. 2011. Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages. Annual Review of Chemical and Biomolecular Engineering, Vol. 2, Issue. 1, p. 379.
Elkasabi, Yaseen Ross, Aftin M. Oh, Jonathan Hoepfner, Michael P. Fogler, H. Scott Lahann, Joerg and Krebsbach, Paul H. 2014. Design Strategies for Reduced-scale Surface Composition Gradients via CVD Copolymerization. Chemical Vapor Deposition, Vol. 20, Issue. 1-2-3, p. 23.
Chen, Wenxin Zhou, Zhuxin Yang, Tingting Bei, Runxin Zhang, Yi Liu, Siwei Chi, Zhenguo Chen, Xudong and Xu, Jiarui 2016. Synthesis and properties of highly organosoluble and low dielectric constant polyimides containing non-polar bulky triphenyl methane moiety. Reactive and Functional Polymers, Vol. 108, Issue. , p. 71.
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Several novel processes have been developed in our lab to synthesize and deposit polymers that have extremely low dielectric constants (below 2.5) as thin films. These reactive intermediates are condensed onto wafers in a vacuum chamber and no chemical waste is produced. Furthermore, cold traps can be used to recover uncondensed monomers through the pumping system. Because of the extremely low dielectric constant, very low moisture uptake and high temperature stability of these vapor depositable materials, these environmentally friendly polymers are very attractive for future electronic applications as interlayer dielectrics. Examples are Parylene-F(fluorinated), poly(naphthalene) (PNT-N), poly(fluorinated naphthalene) (PNT-F), and Teflon AF 1600 (amorphous). These films were deposited at substrate temperatures between −20 and 350 °C and at deposition pressure was 10−4−2.5 Torr. The film thicknesses were between 0.1–10 μ. and dielectric constants were between 1.9–2.5. The thermal stabilities of these films were between 360–590 °C. Among them, poly(fluorinated naphthalene) dissociates at about 590 °C. Poly(naphthalene) and poly(fluorinated naphthalene) are obtained as films by vaporizing monomers in vacuo and transporting the vapor to a hot surface.
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