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Van Der Waals Epitaxy of II-Vi Semiconductors on Layered Chalcogenide (0001) Substrates: Towards Buffer Layers for Lattice Mismatched Systems?

Published online by Cambridge University Press:  10 February 2011

T. Löher ,
A. Klein ,
E. Schaar-Gabriel ,
R. Rudolph ,
Y. Tomm ,
M. Giersig ,
C. Pettenkofer  and
W. Jaegermann
T. Löher
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
A. Klein
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
E. Schaar-Gabriel
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
R. Rudolph
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
Y. Tomm
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
M. Giersig
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
C. Pettenkofer
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
W. Jaegermann
Affiliation:
Hahn-Meitner-Institut, Abt. CG, Glienicker Straße 100, D-14109 Berlin, Jaegermann@hmi.de
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Abstract

The II-VI semiconductor CdS was grown by molecular beam epitaxy on the van der Waals faces of the layered semiconductor InSe. Chemical, electronic and morphological properties of the deposited films were investigated by means of low energy electron diffraction (LEED), soft x-ray photoelectron spectroscopy (SXPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). In contrast to observations made on other layered crystals, nucleation of CdS on InSe is possible also at elevated temperatures which is attributed to the small lattice mismatch. The growth front of CdS corresponds to the sulfur terminated polar (111)-B surface which has a strong tendency to form facets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 597
Copyright
Copyright © Materials Research Society 1997

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